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Polycrystalline ingots from our technological developments offered for reduced price.
This polycrystalline material could be used for single crystal growth tests or tuning of crystal growth technology.
Since the Hall parameters on these ingots have limited quality, the price is reduced to cover the cost of the Indium material only. The purity of Indium is 6NP and presently following ingots are available for sale:



Polycrystalline InP
 

Polycrystalline InP
Ingot number: InP_2006066
Ingot weight: 2050 g
TOP – last crystallised place
Res.: 3.73E-2 ohm.cm
Hall. Mobility: 3500 cm2/Vs
Hall. carrier conc.: 4.78E16 cm-3
BOTTOM – first crystallised place
Res.: 8.56E-2 ohm.cm
Hall. Mobility: 3200 cm2/Vs
Hall. carrier conc.: 2.28E16 cm-3
 
Ingot number: InP_2006066
Ingot weight: 2064 g
TOP – last crystallised place
Res.: 3.73E-2 ohm.cm
Hall. Mobility: 3500 cm2/Vs
Hall. carrier conc.: 4.78E16 cm-3
BOTTOM – first crystallised place
Res.: 8.56E-2 ohm.cm
Hall. Mobility: 3200 cm2/Vs
Hall. carrier conc.: 2.28E16 cm-3




Polycrystalline InP
 

Polycrystalline InP
Ingot number : InP_2006079
Ingot weight : 2544 g
TOP – last crystallised place
Res. : 3.87E-2 ohm.cm
Hall. Mobility : 3540 cm2/Vs
Hall. carrier conc. : 4.56E16 cm-3
BOTTOM – first crystallised place
Res. : 10.4E-2 ohm.cm
Hall. Mobility : 2730 cm2/Vs
Hall. carrier conc. : 2.20E16 cm-3
 
Ingot number : InP_2006079
Ingot weight : 2468 g
TOP – last crystallised place
Res. : 3.87E-2 ohm.cm
Hall. Mobility : 3540 cm2/Vs
Hall. carrier conc. : 4.56E16 cm-3
BOTTOM – first crystallised place
Res. : 10.4E-2 ohm.cm
Hall. Mobility : 2730 cm2/Vs
Hall. carrier conc. : 2.20E16 cm-3


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