Indium Phosphide
High Purity InP Polycrystal
This material is for InP single crystal growth. For long-term deliveries, the diameter of the ingot can be specified by the client.
Basic information:
Production Method:
Synthesized by VGF method.
Dimension (standard):
Diameter: 107 mm
Weight: 5 kg
Electrical Property:
Carrier concentration nH: 4E15 – 1E16 [cm-3]
Mobility μH: 3800 – 4300 [cm2 V-1 s-1]
Contact us to receive more information about Indium Phosphide from PHOSTEC.
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